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| PD -91865B IRF7555 HEXFET(R) Power MOSFET Trench Technology q Ultra Low On-Resistance q Dual P-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.1mm) q Available in Tape & Reel q S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -20V 3 6 4 5 RDS(on) = 0.055 T o p V ie w Description New trench HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8TM package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro8TM Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS EAS dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -20 -4.3 -3.4 -34 1.25 0.8 10 12 36 1.1 -55 to + 150 240 (1.6mm from case) Units V A W W mW/C V mJ V/ns C Thermal Resistance Parameter RJA Max. Units 100 C/W Maximum Junction-to-Ambient www.irf.com 1 2/2/00 IRF7555 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.60 2.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.005 --- V/C Reference to 25C, ID = -1mA --- 0.055 VGS = -4.5V, ID = -4.3A --- 0.105 VGS = -2.5V, ID = -3.4A --- -1.2 V VDS = VGS, ID = -250A --- --- S V DS = -10V, ID = -0.8A --- -1.0 VDS = -16V, VGS = 0V A --- -25 VDS = -16V, VGS = 0V, TJ = 125C --- -100 V GS = -12V nA --- 100 VGS = 12V 10 15 ID = -3.0A 2.1 3.1 nC VDS = -10V 2.5 3.7 VGS = -5.0V 10 --- VDD = -10V 46 --- ID = -2.0A ns 60 --- RG = 6.0 64 --- R D = 5.0 1066 --- VGS = 0V 402 --- pF V DS = -10V 126 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 54 41 -1.3 A -34 -1.2 82 61 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.6A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t 10sec. Starting TJ = 25C, L = 8.0mH RG = 25, I AS = -3.0A. ISD -2.0A, di/dt -140A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7555 100 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 10 10 1 1 -1.50V -1.50V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = -4.3A TJ = 25 C RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 1.5 TJ = 150 C 10 1.0 0.5 1 1.0 V DS = -15V 20s PULSE WIDTH 2.0 3.0 4.0 5.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7555 1600 -VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 15 ID = -4.3A -4.5A 12 1200 C, Capacitance (pF) Ciss VDS = -10V 9 800 6 400 Coss Crss 0 1 10 100 3 0 0 4 8 12 16 20 24 -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -ISD , Reverse Drain Current (A) 10us -ID , Drain Current (A) I 10 10 100us TJ = 150 C TJ = 25 C 1 1ms 1 10ms 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 2.4 0.1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7555 5.0 100 EAS , Single Pulse Avalanche Energy (mJ) 4.0 80 ID -1.3A -2.4A BOTTOM -3.0A TOP -ID , Drain Current (A) 3.0 60 2.0 40 1.0 20 0.0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( C) Starting TJ , Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7555 Package Outline Micro8TM Outline TM Dimensions are shown in millimeters (inches) L E A D A S S IG N M E N T S D -B3 DDDD 8765 3 E -A1234 SSSG S1 G 1 S2 G 2 8765 H 0 .2 5 (.0 1 0 ) M A M S IN G L E 1234 DUAL 1234 D1 D1 D2 D2 8765 D IM A A1 B C D e e1 E H L IN C H E S M IN .0 3 6 .0 0 4 .0 1 0 .0 0 5 .1 1 6 M AX .0 4 4 .0 0 8 .0 1 4 .0 0 7 .1 2 0 M IL L IM E T E R S M IN 0 .9 1 0 .1 0 0 .2 5 0 .1 3 2 .9 5 MAX 1 .1 1 0 .2 0 0 .3 6 0.18 3.05 .0 2 5 6 B A S IC .0 1 2 8 B A S IC .1 1 6 .1 8 8 .0 1 6 0 .1 2 0 .1 9 8 .0 2 6 6 0 .6 5 B A S IC 0 .3 3 B A S IC 2 .9 5 4 .7 8 0 .4 1 0 3 .0 5 5 .0 3 0 .6 6 6 e 6X e1 A -CB 8X 0 .0 8 (.0 0 3 ) M A1 C AS B S 0 .1 0 (.0 0 4 ) L 8X C 8X R E C O M M E N D E D F O O T P R IN T 1 .0 4 ( .0 4 1 ) 8X 0 .3 8 8X ( .0 1 5 ) 3 .2 0 ( .1 2 6 ) 4 .2 4 5 .2 8 ( .1 6 7 ) ( .2 0 8 ) N O TE S : 1 D IM E N S IO N IN G A N D TO L E R A N C IN G P E R A N S I Y 14 .5M -1 982 . 2 C O N TR O LL IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S D O N O T IN C LU D E M O LD F L AS H . 0 .6 5 6 X ( .02 5 6 ) Part Marking Information Micro8TM TM D A T E C O D E (YW W ) A Y = LA ST D IG IT O F YEA R W W = W EE K EX AM PLE : T H IS IS A N IR F 7501 45 1 75 01 P AR T N U M B ER TOP 6 www.irf.com IRF7555 Tape & Reel Information Micro8TM TM Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N OTES: 1 . O U TL IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. 2 . C O N TR O LL IN G D IM E N S IO N : M ILL IM E T E R . 3 3 0 .0 0 (1 2 .9 9 2 ) M AX. 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) NO TES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252 7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 2/2000 www.irf.com 7 |
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